0105-50
Производитель
Microsemi
Категория
Описание
0105-50 RF Power Transistor Bipolar/HBT
Доставка: 3 недели
42 шт.
В наличии
0 шт.
Технические характеристики
Voltage - Collector Emitter Breakdown (Max) | 65 V |
Voltage - Collector Emitter Breakdown (Max) | 65 V |
Voltage - Collector Emitter Breakdown (Max) | 65 V |
Power - Max | 140 W |
Current - Collector (Ic) (Max) | 7 A |
Power - Max | 140 W |
Power - Max | 140 W |
Current - Collector (Ic) (Max) | 7 A |
Current - Collector (Ic) (Max) | 7 A |
Series | * |
Series | * |
Series | * |
Packaging | * |
Packaging | * |
Transistor Type | NPN |
Packaging | * |
Transistor Type | NPN |
Transistor Type | NPN |
Frequency - Transition | 100MHz ~ 500MHz |
Gain | 8.5dB ~ 10dB |
Frequency - Transition | 100MHz ~ 500MHz |
Frequency - Transition | 100MHz ~ 500MHz |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
Gain | 8.5dB ~ 10dB |
Gain | 8.5dB ~ 10dB |
Mounting Type | * |
Supplier Device Package | * |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
Mounting Type | * |
Mounting Type | * |
Supplier Device Package | * |
Supplier Device Package | * |
Информация о складах
Склад | Доставка | Кол-во | Цена |
---|---|---|---|
склад №114
|
2-3 нед. | 235 шт. | По запросу |
А также наличие на других складах.