APTM20DHM20TG Power MOSFET Transistor
Warehouse № Lead time Qty Price
1 up to 3 wk. 731 pcs. By request

Technical characteristics

Drain to Source Voltage (Vdss) 200.0 V
Current - Continuous Drain (Id) @ 25°C 89.0 A
Power - Max 357.0 W
Packaging Bulk
FET Type 2 N-Channel (Asymmetrical Bridge)
FET Feature Standard
Rds On (Max) @ Id, Vgs 24 mOhm @ 44.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) @ Vgs 112nC @ 10V
Input Capacitance (Ciss) @ Vds 6850pF @ 25V
Mounting Type Chassis Mount
Supplier Device Package SP4

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