Please go to iiiC Component Part Num: IXBT6N170 Description: BiMOSFETs Configuration: Copack (FRD) Package Style: TO-268 Active Part Parameter IXBT6N170 VCES, (V) 1700 IC25, TC=25°C, (A) 10 IC90, TC=90°C, (A) 6 IC110, TC=110°C, (A) VCE(sat), typ, TJ=25°C, (V) 3.4 tf typ, TJ=25°C, (ns) 690 tfi typ, TJ=25°C, (ns) Gate drive, (V) 15 RthJC, max, (°C/W) 1.65 Weight: 0.005kg
Warehouse № Lead time Qty Price
1 up to 3 wk. 660 pcs. By request

Technical characteristics

Voltage - Collector Emitter Breakdown (Max) 1700.0 V
Current - Collector (Ic) (Max) 12.0 A
Current - Collector Pulsed (Icm) 36.0 A
Power - Max 75.0 W
Gate Charge 17.0 nC
Reverse Recovery Time (trr) 1.08 µs
Packaging Tube
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 6A
Input Type Standard
Mounting Type Surface Mount
Supplier Device Package TO-268

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