Ixys Tube MOSFET 14 Amps 800V 0.72 Rds Email sales@eis-ic.com

Attached files

Warehouse № Lead time Qty Price
1 up to 3 wk. 692 pcs. By request

Technical characteristics

Drain to Source Voltage (Vdss) 800.0 V
Power - Max 400.0 W
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Rds On (Max) @ Id, Vgs 720 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Gate Charge (Qg) @ Vgs 61nC @ 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Mounting Type Through Hole
Supplier Device Package PLUS220

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