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MOSFET N-CH 1200V 0.8A T Description:MOSFET N-CH 1200V 0.8A TO-263 FET Type:MOSFET N-Channel Metal Oxide FET Feature:Standard Drain to Source Voltage (Vdss):1200V (1.2kV) Current - Continuous Drain (Id) @ 25¦ C:800mA Rds On (Max) @ Id Vgs:25 Ohm @ 500mA 10V Vgs(th) (Max) @ Id:4.5V @ 50¦A Gate Charge (Qg) @ Vgs:14nC @ 10V Input Capacitance (Ciss) @ Vds:333pF @ 25V Power - Max:50W Mounting Type:Surface Mount Package / Case:TO-263-3 D¦Pak (2 Leads + Tab) TO-263AB Supplier Device Package:TO-263 Packaging:Tube
up to 3 wk.
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