MOSFET N-CH 600V 10A D2- Description:MOSFET N-CH 600V 10A D2-PAK FET Type:MOSFET N-Channel Metal Oxide FET Feature:Standard Drain to Source Voltage (Vdss):600V Current - Continuous Drain (Id) @ 25¦ C:10A Rds On (Max) @ Id Vgs:740 mOhm @ 500mA 10V Vgs(th) (Max) @ Id:5.5V @ 250¦A Gate Charge (Qg) @ Vgs:32nC @ 10V Input Capacitance (Ciss) @ Vds:1610pF @ 25V Power - Max:200W Mounting Type:Surface Mount Package / Case:TO-263-3 D¦Pak (2 Leads + Tab) TO-263AB Supplier Device Package:TO-263AA Packaging:Tube

Attached files

Warehouse № Lead time Qty Price
1 up to 3 wk. 120 pcs. By request

Technical characteristics

Drain to Source Voltage (Vdss) 600.0 V
Power - Max 200.0 W
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Rds On (Max) @ Id, Vgs 740 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 1610pF @ 25V
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)

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