Please go to iiiC Component Part Num: IXTH14N80 Description: High Voltage Power MOSFETs Configuration: Single Package Style: TO-247 Not for New Designs: Contact the factory for lead times (part is still available for purchase). Parameter IXTH14N80 VDSS, Max, (V) 800 ID(cont), TC=25°C, (A) 14 RDS(on), Max, Tj=25°C, (Ohm) 0.7 Ciss, Typ, (pF) 4500 Qg, Typ, (nC) 145 trr, Typ, (ns) 800 Pd, (W) 300 RthJC, Max, (°C/W) 0.42 Weight: 0.006kg
Warehouse № Lead time Qty Price
7 up to 3 wk. 848 pcs. By request

Technical characteristics

Drain to Source Voltage (Vdss) 800.0 V
Power - Max 300.0 W
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Rds On (Max) @ Id, Vgs 700 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)

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