Please go to iiiC Component Part Num: IXTH50N30 Description: High Voltage Power MOSFETs Configuration: Single Package Style: TO-247 Not for New Designs: Contact the factory for lead times (part is still available for purchase). Support Docs: Parameter IXTH50N30 VDSS, Max, (V) 300 ID(cont), TC=25°C, (A) 50 RDS(on), Max, Tj=25°C, (Ohm) 0.06 Ciss, Typ, (pF) 4400 Qg, Typ, (nC) 165 trr, Typ, (ns) 360 Pd, (W) 400 RthJC, Max, (°C/W) 0.31 Weight: 0.006kg
Warehouse № Lead time Qty Price
1 up to 3 wk. 178 pcs. By request

Technical characteristics

Packaging 0.0
FET Type 0.0
FET Feature 0.0
Drain to Source Voltage (Vdss) 300.0 V
Current - Continuous Drain (Id) @ 25°C 50.0
Rds On (Max) @ Id, Vgs 65.0
Vgs(th) (Max) @ Id 4.0
Gate Charge (Qg) @ Vgs 165.0
Input Capacitance (Ciss) @ Vds 4400.0
Power - Max 400.0 W
Mounting Type 0.0
Supplier Device Package 0.0

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