Please go to iiiC Component Part Num: IXTT100N25P Description: Polar? (150V to 300V) with reduced Rds(on) Configuration: Single Package Style: TO-268 Active Part Support Docs: Parameter IXTT100N25P VDSS, Max, (V) 250 ID(cont), TC=25°C, (A) 100 RDS(on), Max, Tj=25°C, (Ohm) 0.027 Ciss, Typ, (pF) 6300 Qg, Typ, (nC) 185 trr, Typ, (ns) 200 Pd, (W) 600 RthJC, Max, (°C/W) 0.21 Weight: 0.005kg

Attached files

Warehouse № Lead time Qty Price
1 up to 3 wk. 868 pcs. By request

Technical characteristics

Drain to Source Voltage (Vdss) 250.0 V
Power - Max 600.0 W
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 185nC @ 10V
Input Capacitance (Ciss) @ Vds 6300pF @ 25V
Mounting Type Surface Mount
Supplier Device Package TO-268

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