SUP85N10-10-E3

Manufacturer
Vishay Micro Measurements
Category
Description
TRANSISTOR, MOSFET
Delivery: 3 weeks 53290 pcs.
In stock 0 pcs.

Specifications

Drain to Source Voltage (Vdss) 100 V
Power - Max 3.75 W
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25° C 85A (Tc)
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) @ Vds 6550pF @ 25V
Mounting Type Through Hole
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25°C 85A (Tc)

Stock Info

Stock Delivery Qty. Price
stock #86
2-3 wk. 879 pcs. On request

Also available at other stocks.